Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Tian‐Li Wu; Denis Marcon; Brice De Jaeger; M. Van Hove; Benoit Bakeroot; Steve Stoffels; G. Groeseneken; Stefaan Decoutere; Robin Roelofs

doi:10.1109/irps.2015.7112769

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Identifier:nobleid.org/w1/20260524/2009AAA8

Type:Journal Article

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Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Identifier:nobleid.org/w1/20260524/2009AAA8

Type:Journal Article

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