Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs

Erik Rosseel; Harald B. Profijt; Andriy Hikavyy; John Tolle; Stefan Kubicek; G. Mannaert; Caroline Labbé; Kurt Wostyn; Naoto Horiguchi; Trudo Clarysse

doi:10.1149/06406.0977ecst

Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs

Identifier:nobleid.org/w1/20260525/AC8B7DC3

Type:Journal Article

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Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs

Identifier:nobleid.org/w1/20260525/AC8B7DC3

Type:Journal Article

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