Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices

T. Sakuda; N. Sadachika; Y. Oritsuki; Masahiro Yokomichi; M. Miyake; T. Kajiwara; Hideyuki Kikuchihara; Uwe Feldmann; Hans Jürgen Mattausch; M. Miura–Mattausch

doi:10.1109/sispad.2009.5290211

Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices

Identifier:nobleid.org/w1/20260515/20003046

Type:Journal Article

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Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices

Identifier:nobleid.org/w1/20260515/20003046

Type:Journal Article

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