基于890 nm半导体激光器的InGaAs/GaAsP多量子阱的外延生长条件及其界面质量研究

慕京飞 Mu Jingfei; Bin Wang; 周寅利 Zhou Yinli; 陈超 Chen Chao; 曾玉刚 ZENG Yu-gang; 张建伟 Zhang Jianwei; 张星 Zhang Xing; 刘天娇 Liu Tianjiao; Zhuo Zhang; 徐玥辉 Xu Yuehui

doi:10.3788/cjl240989

基于890 nm半导体激光器的InGaAs/GaAsP多量子阱的外延生长条件及其界面质量研究

Identifier:nobleid.org/w1/20260515/47D2F883

Type:Journal Article

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基于890 nm半导体激光器的InGaAs/GaAsP多量子阱的外延生长条件及其界面质量研究

Identifier:nobleid.org/w1/20260515/47D2F883

Type:Journal Article

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