Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD | NobleID

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Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD

Identifier:nobleid.org/w1/20260515/500F3AEF

Type:Journal Article

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