Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr&lt;sub&gt;0.85&lt;/sub&gt;Si&lt;sub&gt;0.15&lt;/sub&gt;O&lt;sub&gt;2&lt;/sub&gt; Gate Dielectric

Z. Zhuang; S.J. Wang; Shih-Yuan Wang; H.Y. Chen; C.K. Liao; S.T. Hsiao; Bin You; Rong-Ming Ko

doi:10.7567/ssdm.2018.ps-10-04

Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Identifier:nobleid.org/w1/20260515/8AC02AB7

Type:Conference Paper

0 views

Support unavailableClaim Your Authorship

View Original Paper Source

Embeddable Badge

[![NobleID](https://www.nobleid.org/api/badge/8AC02AB7.svg?ark=w1%2F20260515%2F8AC02AB7)](https://nobleid.org/work/w1/20260515/8AC02AB7)

ARK Inflections

Metadata Policy

Metadata Formats

Bibliometric Analysis

Impact metrics, research fronts, co-authorship networks →

Authors & Claims

Paper Authors

Claim authorship of this work

Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Identifier:nobleid.org/w1/20260515/8AC02AB7

Type:Conference Paper

0 views

Support unavailableClaim Your Authorship

View Original Paper Source

Embeddable Badge

[![NobleID](https://www.nobleid.org/api/badge/8AC02AB7.svg?ark=w1%2F20260515%2F8AC02AB7)](https://nobleid.org/work/w1/20260515/8AC02AB7)

ARK Inflections

Metadata Policy

Metadata Formats

Bibliometric Analysis

Impact metrics, research fronts, co-authorship networks →

Authors & Claims

Paper Authors

Claim authorship of this work

Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr<sub>0.85</sub>Si<sub>0.15</sub>O<sub>2</sub> Gate Dielectric

Embeddable Badge

ARK Inflections

Metadata Formats

Improved Electrical Stability of Zr-IGZO Thin-Film Transistors with Zr<sub>0.85</sub>Si<sub>0.15</sub>O<sub>2</sub> Gate Dielectric

Embeddable Badge

ARK Inflections

Metadata Formats