Doped vs. undoped Si 1−x−y Ge x C y layers in sub-100 nm vertical p-channel MOSFETs | NobleID

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Doped vs. undoped Si 1−x−y Ge x C y layers in sub-100 nm vertical p-channel MOSFETs

NobleID: NI2P45W59R02S55
Persistent link: https://nobleid.org/ark:/48914/w1/20260515/8CD5FA3F

Type:Journal Article

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