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Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching | NobleID

v1

Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching

Takeshi Okamoto, Yasuhisa Sano, Kazuma Tachibana, Kenta Arima and 5 more

TO

Takeshi Okamoto

NobleIDNI2P01W22R12S61

Type:Journal Article

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