Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors | NobleID

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Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

NobleID: NI5P55W31R87S69
Persistent link: https://nobleid.org/ark:/48914/w1/20260515/AF3012E3

Type:Journal Article

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Chun‐Cheng Cheng

Chih‐Ming Lai

Chrong-Jung Lin

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