Effectively Confining the Lateral Current Within the Aperture for GaN Based VCSELs by Using a Reverse Biased NP Junction

Yuanbin Gao; Yonghui Zhang; Chunshuang Chu; Sheng Hang; Xuejiao Qiu; Jianquan Kou; Kangkai Tian; Zi‐Hui Zhang; Jianwei Zhou

doi:10.1109/jqe.2020.3000782

Effectively Confining the Lateral Current Within the Aperture for GaN Based VCSELs by Using a Reverse Biased NP Junction

Identifier:nobleid.org/w1/20260515/B32CD1DF

Type:Journal Article

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Effectively Confining the Lateral Current Within the Aperture for GaN Based VCSELs by Using a Reverse Biased NP Junction

Identifier:nobleid.org/w1/20260515/B32CD1DF

Type:Journal Article

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