A Low Leakage Current in SiGe Hetro-junction FET Using by ICP Dry Etching Process | NobleID

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A Low Leakage Current in SiGe Hetro-junction FET Using by ICP Dry Etching Process

Identifier:nobleid.org/w1/20260515/BA1DEF09

Type:Journal Article

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Shoou‐Jinn Chang

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