Reliability extrapolation model for stress-induced-leakagecurrent in thin silicon oxides | NobleID

Main

Mint Work Search Explore Works Knowledge Graph Citation Graph Bibliometrics Receipts

v1

Reliability extrapolation model for stress-induced-leakagecurrent in thin silicon oxides

Identifier:nobleid.org/w1/20260515/BFD8ADBF

Type:Journal Article

0 views

Support unavailableClaim Your Authorship

Embeddable Badge

[![NobleID](https://www.nobleid.org/api/badge/BFD8ADBF.svg?ark=w1%2F20260515%2FBFD8ADBF)](https://nobleid.org/work/w1/20260515/BFD8ADBF)

ARK Inflections

Metadata Policy

Metadata Formats

Bibliometric Analysis

Impact metrics, research fronts, co-authorship networks →

Authors & Claims

Paper Authors

Claim authorship of this work

info@nobleid.org

About FAQ Terms Policy Persistence & Resolver Service Policy