v1
Effect of strain on the carrier mobility in heavily doped p-type Si.
Identifier:nobleid.org/w1/20260515/C7CEF9DA
Type:Journal Article
0 views
Embeddable Badge
[](https://nobleid.org/work/w1/20260515/C7CEF9DA)
Bibliometric Analysis
Impact metrics, research fronts, co-authorship networks →
Authors & Claims