Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

Summerfield, Alex; Davies, Andrew; Cheng, Tin S; Korolkov, Vladimir V; Cho, Yong Jin; Mellor, Christopher J; Foxon, C Thomas; Khlobystov, Andrei N; Watanabe, Kenji; Taniguchi, Takashi

doi:10.1038/srep27047

Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

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Type:Journal Article

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Erratum: Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy.

NobleIDNI7P87W12R82S24

Type:Journal Article

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