v1
Experimental Demonstration of HfO2-based Ferroelectric FET with MoS2 Channel for High-Density and Low-Power Memory Application
Identifier:nobleid.org/w1/20260515/DFCB2ECC
Type:Journal Article
0 views
Embeddable Badge
[](https://nobleid.org/work/w1/20260515/DFCB2ECC)
Bibliometric Analysis
Impact metrics, research fronts, co-authorship networks →
Authors & Claims