Electrical activation studies of GaN implanted with Si from low to high dose | NobleID

Main

Mint Work Search Explore Works Knowledge Graph Citation Graph Bibliometrics Receipts

v1

Electrical activation studies of GaN implanted with Si from low to high dose

Identifier:nobleid.org/w1/20260515/EB91AB33

Type:Journal Article

0 views

Support unavailableClaim Your Authorship

View Original Paper Source

Embeddable Badge

[![NobleID](https://www.nobleid.org/api/badge/EB91AB33.svg?ark=w1%2F20260515%2FEB91AB33)](https://nobleid.org/work/w1/20260515/EB91AB33)

ARK Inflections

Metadata Policy

Metadata Formats

Bibliometric Analysis

Impact metrics, research fronts, co-authorship networks →

Authors & Claims

Paper Authors

James A. Fellows

R. L. Hengehold

Claim authorship of this work

info@nobleid.org

About FAQ Terms Policy Persistence & Resolver Service Policy