A Recessed Channel MOSFET with Plasma-grown Silicon Oxynitride Gate Dielectric | NobleID

Main

Mint Work Search Explore Works Knowledge Graph Citation Graph Bibliometrics Receipts

v1

A Recessed Channel MOSFET with Plasma-grown Silicon Oxynitride Gate Dielectric

Identifier:nobleid.org/w1/20260515/EEC2CDC2

Type:Journal Article

0 views

Support unavailableClaim Your Authorship

View Original Paper Source

Embeddable Badge

[![NobleID](https://www.nobleid.org/api/badge/EEC2CDC2.svg?ark=w1%2F20260515%2FEEC2CDC2)](https://nobleid.org/work/w1/20260515/EEC2CDC2)

ARK Inflections

Metadata Policy

Metadata Formats

Bibliometric Analysis

Impact metrics, research fronts, co-authorship networks →

Authors & Claims

Paper Authors

Yukinori Kuroki

Claim authorship of this work

info@nobleid.org

About FAQ Terms Policy Persistence & Resolver Service Policy