TECHNIQUES FOR EXPERIMENTAL FABRICATION OF A 1WATT, 1-GC GALLIUM ARSENIDE TRANSISTOR. | NobleID

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TECHNIQUES FOR EXPERIMENTAL FABRICATION OF A 1WATT, 1-GC GALLIUM ARSENIDE TRANSISTOR.

Identifier:nobleid.org/w1/20260515/F352CE5F

Type:Journal Article

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Raymond Sangster

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