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Repetitive Short-Circuit Ruggedness of Different SiC MOSFET Channel Designs | NobleID

v1

Repetitive Short-Circuit Ruggedness of Different SiC MOSFET Channel Designs

IEEE International Reliability Physics Symposium 2025, Piccioni, Andrea

I2

IEEE International Reliability Physics Symposium 2025

NobleIDNI2P99W39R03S64

Type:Journal Article

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