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An Analytical Hole Mobility Model for Biaxial Strained-Si-p-MOSFET | NobleID

v1

An Analytical Hole Mobility Model for Biaxial Strained-Si-p-MOSFET

Amit Chaudhry, Sonu Sangwan

AC

Amit Chaudhry

NobleIDNI0P56W11R32S15

Type:Journal Article

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