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On the Donor Activity of Oxygen in Silicon at Temperatures from 500 to 800 °C | NobleID

v1

On the Donor Activity of Oxygen in Silicon at Temperatures from 500 to 800 °C

K Schmalz, P Gawokzewski

KS

K Schmalz

NobleIDNI5P13W65R00S75

Type:Journal Article

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