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High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE | NobleID

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High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE

V.H. Compeán-Jasso, F. de Anda-Salazar, Francisco Sánchez-Niño, V.A. Mishurnyi, J. Martínez‐Juárez

VC

V.H. Compeán-Jasso

NobleIDNI8P20W56R28S12

Type:Journal Article

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