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A High Schottky-Barrier of 1.1 eV Between Al and S-Passivated p-Type Si(100) Surface | NobleID

v1

A High Schottky-Barrier of 1.1 eV Between Al and S-Passivated p-Type Si(100) Surface

Guanghua Song, Muhammad Ali, Meng Tao

GS

Guanghua Song

NobleIDNI7P56W00R83S08

Type:Journal Article

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