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Electrical properties of S+-implanted GaAs annealed by covering with As-doped a-Si:H films
Work NobleIDNI2P80W32R01S40
Type:Journal Article
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Masanori Sakaguchi
Katsuhiro Yokota
Akira Shiomi
Haruya Mori Haruya Mori
Makoto Watanabe
Toshinori Takagi
Kiyohito Hirai
Hiromichi Takano
Masao Kumagai