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New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment | NobleID
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New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment
С. А. Кукушкін
,
А. В. Осипов
СК
С. А. Кукушкін
NobleID
NI8P05W87R96S77
Type:
Journal Article
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