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v1

A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices

Subramanian S. Iyer, P. M. Solomon, V. P. Kesan, A. A. Bright and 3 more

NobleIDNI4P25W65R23S84

Type:Journal Article

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Paper Authors

S

Subramanian S. Iyer

P

P. M. Solomon

V

V. P. Kesan

A

A. A. Bright

J

J. L. Freeouf

T

T.N. Nguyen

A

A.C. Warren

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