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Epitaxial C 49 ‐ TiSi2 Formation on (100)Si Substrate Using TiN x and Its Electrical Characteristics as a Shallow Contact Metallization | NobleID
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Epitaxial C 49 ‐ TiSi2 Formation on (100)Si Substrate Using TiN x and Its Electrical Characteristics as a Shallow Contact Metallization
Jeong Soo Byun
JB
Jeong Soo Byun
NobleID
NI6P98W96R92S68
Type:
Journal Article
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